Bipolar power transistor having bypassable incorporated-base bal

Details Bipolar power transistor having bypassable incorporated-base bal Bipolar power transistor having bypassable incorporated-base bal

1984-05-08

1989-01-24

Edlow, Martin H.

357 86, H01L 2972

Patent

active

048004162

ABSTRACT:
The ballast resistance of the base of a bipolar power transistor is realized by a localized pinching of the base region by means of a special diffused region. A surface metallization brings the diffused region into contact with the adjacent base region so that a diode is formed in parallel with the base ballast resistance. The diode becomes conductive when the voltage drop across the resistance which is generated by the base current of the transistor exceeds the conduction threshold of the junction, thereby bypassing the ballast resistance.

REFERENCES:
patent: 3860460 (1975-01-01), Olson

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