Bipolar power semiconductor device and process for its manufactu

Details Bipolar power semiconductor device and process for its manufactu Bipolar power semiconductor device and process for its manufactu

1989-04-28

1991-07-16

Jackson, Jr., Jerome

357 71, 357 68, 357 34, H01L 2972, H01L 2348, H01L 2944, H01L 2952

Patent

active

050328875

ABSTRACT:
A bipolar power semiconductor device, particularly a transistor, of structure formed by a matrix array of cells operating as emitter regions, comprises two separated and superposed layers of metal, one for the base and one for the emitter, separated by a layer of polyimide, as an intermediate dielectrtic.

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Miller et al., An Advanced High Voltage Bipolar Transistor with Extended RBSOA Using 5 .mu.m Small Emitter Structures, IEDM 85, pp. 142-145, 1985, IEEE.

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