Bipolar-MISFET compound inverter with discharge transistor

Details Bipolar-MISFET compound inverter with discharge transistor Bipolar-MISFET compound inverter with discharge transistor

1986-08-18

1988-12-13

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307300, 307443, 307451, 307454, H03K 1901

Patent

active

047913207

ABSTRACT:
A compound transistor type inverter, i.e., comprised of MIS and bipolar transistors, including, at the output stage thereof, an npn transistor operative to charge a load. The npn transistor can be quickly cut OFF by an additional transistor, and simultaneously, the additional transistor is operative to attain a quick discharge from the load. Still another additional transistor is employed, in a case where the inverter includes a pnp transistor, other than the npn transistor, at a ground side, which another additional transistor is operative to bypass the collector and emitter of the pnp transistor.

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patent: 4682054 (1987-07-01), McLaughlin
Lin et al, "Complementary MOS-Bipolar Transistor Structure", IEEE TELD, vol. Ed-16, No. 11, Nov. 1969, pp. 945-951.

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