Bipolar microwave integratable transistor

Details Bipolar microwave integratable transistor Bipolar microwave integratable transistor

1987-04-22

1989-03-14

James, Andrew J.

357 59, 357 44, 357 46, H01L 2972, H01L 2904, H01L 2702

Patent

active

048128902

ABSTRACT:
A method of fabricating bipolar intergratable transistors includes a recrystallization step. A monocrystalline epitaxial layer is deposited upon a highly doped substrate and impurities are introduced into a portion of the epitaxial layer to form a first transistor region. A polysilicon layer is deposited upon the surface and a portion of the polycrystalline layer is recrystallized wherein the first transistor region serves as a seed. Impurities are introduced into the recrystallized portion to form a base. An additional polysilicon layer is deposited over the substrate and a portion is recrystallized wherein the base serves as a seed. A second transistor region is formed in the recrystallized portion of the additional polysilicon layer.

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