Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Reissue Patent
2011-01-06
2011-12-27
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
C257S047000, C257S197000, C257S575000, C257SE27053, C257SE27074, C257SE21381
Reissue Patent
active
RE043042
ABSTRACT:
In accordance with the invention, there are various methods of making an integrated circuit comprising a bipolar transistor. According to an embodiment of the invention, the bipolar transistor can comprise a substrate, a collector comprising a plurality of alternating doped regions, wherein the plurality of alternating doped regions alternate in a lateral direction from a net first conductivity to a net second conductivity, and a collector contact in electrical contact with the collector. The bipolar transistor can also comprise a heavily doped buried layer below the collector, a base in electrical contact with a base contact, wherein the base is doped to a net second conductivity type and wherein the base spans a portion of the plurality of alternating doped regions, and an emitter disposed within the base, the emitter doped to a net first conductivity, wherein a portion of the alternating doped region under the emitter is doped to a concentration of less than about 3×1012cm−2.
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Fogg & Powers LLC
Intersil America's Inc.
Pham Thanh V
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