Bipolar method and structure having improved BVCEO/RCS...

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of...

Reexamination Certificate

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C438S311000, C438S322000, C438S340000, C438S508000, C438S508000, C257S197000, C257S565000, C257SE21381

Reexamination Certificate

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11217304

ABSTRACT:
In accordance with the invention, there are various methods of making an integrated circuit comprising a bipolar transistor. According to an embodiment of the invention, the bipolar transistor can comprise a substrate, a collector comprising a plurality of alternating doped regions, wherein the plurality of alternating doped regions alternate in a lateral direction from a net first conductivity to a net second conductivity, and a collector contact in electrical contact with the collector. The bipolar transistor can also comprise a heavily doped buried layer below the collector, a base in electrical contact with a base contact, wherein the base is doped to a net second conductivity type and wherein the base spans a portion of the plurality of alternating doped regions, and an emitter disposed within the base, the emitter doped to a net first conductivity, wherein a portion of the alternating doped region under the emitter is doped to a concentration of less than about 3×1012cm−2.

REFERENCES:
patent: 4532003 (1985-07-01), Beasom
patent: 4729008 (1988-03-01), Beasom
patent: 5344785 (1994-09-01), Jerome et al.
patent: 5428233 (1995-06-01), Walczyk
patent: 5633180 (1997-05-01), Bajor
patent: 2002/0000640 (2002-01-01), Zhu
patent: 2002/0113275 (2002-08-01), Stecher et al.
patent: 2003/0008483 (2003-01-01), Sato et al.
patent: 2004/0212032 (2004-10-01), Onishi et al.
patent: 2004/0238882 (2004-12-01), Suzuki et al.
patent: WO 0184631 (2001-11-01), None
patent: WO 2005020275 (2005-03-01), None
Jacob Millman, Microelectronics, 1997, McGraw-Hill Book Company, Chapter 3, pp. 57-65.

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