Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of...
Reexamination Certificate
2007-10-23
2007-10-23
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
C438S311000, C438S322000, C438S340000, C438S508000, C438S508000, C257S197000, C257S565000, C257SE21381
Reexamination Certificate
active
11217304
ABSTRACT:
In accordance with the invention, there are various methods of making an integrated circuit comprising a bipolar transistor. According to an embodiment of the invention, the bipolar transistor can comprise a substrate, a collector comprising a plurality of alternating doped regions, wherein the plurality of alternating doped regions alternate in a lateral direction from a net first conductivity to a net second conductivity, and a collector contact in electrical contact with the collector. The bipolar transistor can also comprise a heavily doped buried layer below the collector, a base in electrical contact with a base contact, wherein the base is doped to a net second conductivity type and wherein the base spans a portion of the plurality of alternating doped regions, and an emitter disposed within the base, the emitter doped to a net first conductivity, wherein a portion of the alternating doped region under the emitter is doped to a concentration of less than about 3×1012cm−2.
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Jacob Millman, Microelectronics, 1997, McGraw-Hill Book Company, Chapter 3, pp. 57-65.
Intersil Americas
MH2 Technology Law Group
Pham Thanh Van
Smith Matthew
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