Bipolar memory circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307300, 340173R, G11C 1140

Patent

active

039492435

ABSTRACT:
A bipolar memory circuit having a storage cell including a single bipolar transistor whose collector-base junction acts to provide a capacitor for capacitive charge storage; a charging means coupled to the emitter or collector to charge the collector-base capacitor of the transistor, the charged condition of that capacitor indicating a first memory state; a discharging means including at least one PN junction series coupled with the base-collector junction of the transistor, the discharging means including an input means coupled through the PN junction for discharging the charge stored in the collector-base junction without need for avalanching the transistor, the discharged condition of the capacitor being indicative of the opposite state of the memory storage cell; a pulse supply for applying sensing pulses between the emitter and the collector electrodes of the transistor; and a signal-detecting circuit at one of the collector or emitter electrodes of the transistor for determining what state the memory cell is in at the time a sensing pulse is applied.

REFERENCES:
patent: 2991374 (1961-07-01), DeMiranda et al.
patent: 3299290 (1967-01-01), Moll
patent: 3588544 (1971-06-01), Wallingford
patent: 3696285 (1972-10-01), Saia

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