Bipolar memory cell having capacitors

Details Bipolar memory cell having capacitors Bipolar memory cell having capacitors

1991-07-01

1994-05-17

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Including additional component in same, non-isolated structure

257554, 257560, 257563, 257571, 257588, H01L 2972, H01L 2702, H01L 2906

Patent

active

053130901

ABSTRACT:
A semiconductor device including a semiconductor substrate, first and second bipolar transistors formed at the major surface of the semiconductor substrate, a Schottky-barrier diode formed on a predetermined area of each of the first and second bipolar transistors, a capacitor formed on each of the first and second bipolar transistors, each capacitor including an insulating layer covering a surface of a respective one of the first and second bipolar transistors, a polysilicon layer formed on the insulating layer in a pattern that extends around the predetermined area, a dielectric film formed covering the polysilicon layer, and a conductive film covering the dielectric film.

REFERENCES:
patent: 4956688 (1990-09-01), Honma et al.
Soft-Error Characteristics in Bipolar Memory Cells With Small Critical Charge, VLSI Symposium circuit, pp. 27-28, 1989, by Y. Idei et al.

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