Bipolar lateral pass-transistor for CMOS circuits

Details Bipolar lateral pass-transistor for CMOS circuits Bipolar lateral pass-transistor for CMOS circuits

1987-12-17

1989-03-14

LaRoche, Eugene R.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 36, 357 43, 307303, H01L 2972, H01L 2702, H03K 326

Patent

active

048128910

ABSTRACT:
A bipolar lateral pass-transistor is disclosed for use in MOS integrated circuits. The transistor includes a semiconductor substrate of a first conductivity type covered by an epitaxial layer, a first region of a second conductivity type disposed in the epitaxial layer at a first doping level to a depth of less than the depth of said epitaxial layer, a second region of said conductivity type spaced apart from and surrounding said first region and extending approximately the entire depth of said epitaxial layer having a doping level less than the first doping level and a third region of said second conductivity type spaced apart from and surrounding said second region and extending approximately the entire depth of said epitaxial layer having said first doping level at the surface of said epitaxial layer and said second doping level extending approximately to the bottom of said epitaxial layer.
In another aspect of the present invention the bipolar lateral pass-transistor is connected to a voltage source and MOS devices also disposed on the surface of the semiconductor substrate are powered by a voltage which is less than the voltage applied to the lateral pass-transistor, in order to prevent desirable forward biasing of parasitic PN junctions.

REFERENCES:
patent: 3703650 (1972-11-01), Kendall
patent: 3878551 (1975-04-01), Callahan, Jr.
patent: 4581547 (1986-04-01), Bynum et al.
patent: 4642667 (1987-02-01), Magee
patent: 4697199 (1987-09-01), De Graaff et al.
patent: 4701646 (1987-10-01), Richardson

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