Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Reexamination Certificate
2008-03-11
2008-03-11
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
C257S374000, C257S446000, C257S511000, C257S512000, C257S525000, C257S526000, C257S527000, C257S555000, C257S556000, C257S557000, C257S558000, C257S564000, C257S592000
Reexamination Certificate
active
07342293
ABSTRACT:
The present invention relates to bipolar junction transistors (BJTS). The collector region of each BJT is located in a semiconductor substrate surface and adjacent to a first shallow trench isolation (STI) region. A second STI region is provided, which extends between the first STI region and the collection region and undercuts a portion of the active base region with an undercut angle of not more than about 90°. For example, the second STI region may a substantially triangular cross-section with an undercut angle of less than about 90°, or a substantially rectangular cross-section with an undercut angle of about 90°. Such a second STI region can be fabricated using a porous surface section formed in an upper surface of the collector region.
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Adam Thomas N.
Bedell Stephen W.
de Souza Joel P.
Wallner Thomas A.
International Business Machines - Corporation
Schnurmann H. Daniel
Scully , Scott, Murphy & Presser, P.C.
Soward Ida M.
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