Bipolar junction transistors and method of manufacturing the...

Details Bipolar junction transistors and method of manufacturing the... Bipolar junction transistors and method of manufacturing the...

2008-05-06

2008-05-06

Ho, Tu-Tu (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Mesa or stacked emitter

C438S350000, C257S591000, C257S578000, C257S586000, C257S587000, C257SE21379

Reexamination Certificate

active

11476808

ABSTRACT:
A substrate has a collector region of a first conductivity type, and a base layer of a single crystalline structure and including impurities of a second conductivity type is located over the collector region. An emitter region is defined at least in part by impurities of the first conductivity type contained in the base layer. An emitter electrode of the first conductivity type contacts the emitter region, and at least a portion of the emitter electrode which is in contact with the emitter region has a single crystalline structure.

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