Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Reexamination Certificate
2005-05-17
2005-05-17
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
C257S557000, C257S558000, C257S559000, C257S592000
Reexamination Certificate
active
06894366
ABSTRACT:
An improved BJT is described that maximizes both Bvceo and Ft/Fmax for optimum performance. Scattering centers are introduced in the collector region (80) of the BJT to improve Bvceo. The inclusion of the scattering centers allows the width of the collector region WCD(90) to be reduced leading to an improvement in Ft/Fmax.
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Babcock Jeffrey
Balster Scott
Howard Gregory E.
Pinto Angelo
Brady III W. James
McLarty Peter K.
Soward Ida M.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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