Bipolar junction transistor on silicon carbide

Details Bipolar junction transistor on silicon carbide Bipolar junction transistor on silicon carbide

1987-10-26

1990-07-31

James, Andrew J.

Fishing, trapping, and vermin destroying

357 61, 357 56, 437100, H01L 2972

Patent

active

049453947

ABSTRACT:
The invention comprises a bipolar junction transistor formed in silicon carbide. By utilizing high temperature ion implantation of doping ions, the base and emitter can be formed as wells, resulting in a planar transistor. Mesa-type transistors are also disclosed.

REFERENCES:
patent: 2918396 (1959-12-01), Hall
patent: 4762806 (1988-08-01), Suzuki et al.
Silicon Carbide Field-Effect and Bipolar Transistors; W. v. Muench, P. Hoeck and E. Pettenpaul, Institut A fuer Werkstoffkunde Technische Universitaet Hanover; D-3000 Hanover, Germany, 1977.
Whatever Happened to Silicon Carbide, Robert B. Campbell, IEEE Transactions on Industrial Electronics, vol. IE-29, No. 2, May 1982.
A. L. Robinson, Chemical Coat Helps Semiconductor Prospects, Research News, Oct. 2, 1987, Science, vol. 238, pp. 27-29.
R. C. Weast, Ph.D. and M. J. Astel, Ph.D., CRC Handbook of Chemistry and Physics, 62nd Editiion, B-101.

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