Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Patent
1993-08-31
1995-01-31
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
257273, 257593, H01L 2973, H01L 2970
Patent
active
053861400
ABSTRACT:
A bipolar transistor having an emitter, a base, and a collector includes an intrinsic base region having narrow side areas and a wider central area. The side areas are located adjacent to the extrinsic base region, while the central area is disposed underneath the emitter. The lateral doping profile of the base is tailored so that the doping concentrations in the extrinsic region and the central area are relatively high compared to the doping concentration of the narrow side areas of the intrinsic base. The combination of the narrow side areas and the lateral base doping profile constrains the depletion region within the base thereby lowering punch-through voltage of the transistor without loss of beta.
REFERENCES:
patent: 4531282 (1985-07-01), Sakai et al.
patent: 4667393 (1987-05-01), Ferla et al.
patent: 4946798 (1990-08-01), Kawakatsu
patent: 4996581 (1991-02-01), Hamasaki
patent: 5140400 (1992-08-01), Morishita
S. M. Sze; "Semiconductor Devices Physics and Technology"; 1985; pp. 110-111.
Warnock et al; "50 GHz Self-Aligned Silicon Bipolar Transistors with Ion Implanted Base Profiles"; IEEE Electron device letters, vol. 11; Oct. 1990.
Fahmy Wael M.
Hille Rolf
MicroUnity Systems Engineering, Inc.
LandOfFree
Bipolar junction transistor exhibiting improved beta punch-throu does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bipolar junction transistor exhibiting improved beta punch-throu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bipolar junction transistor exhibiting improved beta punch-throu will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1104275