Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1997-09-08
2000-02-22
Niebling, John F.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257565, 438309, H01L 310328
Patent
active
060283297
ABSTRACT:
A novel bipolar junction transistor device and a method of fabricating the same are proposed. In accordance with the present invention, a p-type silicon substrate is vertically all-through transmuted into an n-type region locally by using neutron transmutation doping, such that the epitaxy layer and buried layer used in conventional BJT devices can be replaced and isolation between devices can be easily achieved. Consequently, the present invention is characterized by a higher voltage rating than that which can be achieved isolation; and the present invention is also characterized as having compatibility with the MOS.
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Wolf, S.; Silicon Processing the for the VLSI Era vol. 2: Process Integration, Lattice Press, Sunset Beach, CA, p. 273, Jan. 1990.
Industrial Technology Research Institute
Lattin Christopher
Niebling John F.
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