Oscillators – Solid state active element oscillator – Significant distributed parameter resonator
Patent
1997-06-20
1999-03-16
Kinkead, Arnold
Oscillators
Solid state active element oscillator
Significant distributed parameter resonator
331115, 331132, H03B 700, H03B 706
Patent
active
058835490
ABSTRACT:
A BJT, an inductor, and an RTD are configured to define a negative resistance oscillator circuit that is suitable for monolithic integration. The BJT is forward biased so that the RTD operates at a DC operating point (I.sub.Q,V.sub.Q) on its characteristic I-V curve in its negative differential resistance region. The thermal noise inherent in the circuit causes it to start oscillating about the DC operating point (I.sub.Q,V.sub.Q) where the RTD's negative resistance R.sub.n provides positive feedback that amplifies the oscillations until equilibrium is established thereby producing a sinusoidal waveform. The low power BJT/RTD oscillator operates at power levels approximately one-tenth those of known integrated feedback oscillators and oscillates at frequencies in the hundreds of Ghz range that are currently only achievable using waveguide oscillators.
REFERENCES:
patent: 3440567 (1969-04-01), Goell
patent: 3701051 (1972-10-01), Simms
Solid State Radio Engineering, John Wiley & Sons, 1980, Chapter 5, pp. 128-139.
Physics of Quantum Electron Devices, Springer-Verlag, Federico Capasso (Ed.), 1990, pp. 155-158.
High-Speed Semiconductor Devices, S.M. Sze (Ed.), John Wiley & Sons, 1990, pp. 467-475.
Fukuyama et al., "Current-voltage characteristics of GaAs/AlAs double-barrier resonant tunneling diodes with a Si-planar-doped barrier", J. Applied Physics, vol. 79, No. 3, 1 Feb. 1996, pp. 1801-1806.
Chang et al., "Analysis of Heterojunction Bipolar Transistor/Resonant Tunneling Diode Logic for Low-Power and High-Speed Digital Applications", IEEE Transactions on Electron Devices, vol. 40, No. 4, Apr. 1993, pp. 685-691.
Grunebach Georgann S.
Gudmestad Terje
Hughes Electronics Corporation
Kinkead Arnold
Sales Michael W.
LandOfFree
Bipolar junction transistor (BJT)--resonant tunneling diode (RTD does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bipolar junction transistor (BJT)--resonant tunneling diode (RTD, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bipolar junction transistor (BJT)--resonant tunneling diode (RTD will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-821254