Bipolar junction transistor and manufacturing method thereof

Details Bipolar junction transistor and manufacturing method thereof Bipolar junction transistor and manufacturing method thereof

2009-05-11

2010-10-12

Doan, Theresa T (Department: 2814)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S340000, C438S350000, C257S197000, C257S592000

Reexamination Certificate

active

07811894

ABSTRACT:
An improved bipolar junction transistor and a method for manufacturing the same are provided. The bipolar junction transistor includes: a buried layer and a high concentration N-type collector region in a P-type semiconductor substrate; a low concentration P-type base region in the semiconductor substrate above the buried layer; a first high concentration P-type base region along an edge of the low concentration P-type base region; a second high concentration P-type base region at a center of the low concentration P-type base region; a high concentration N-type emitter region between the first and second high concentration base regions; and insulating layer spacers between the high concentration base regions and the high concentration emitter regions. In the bipolar junction transistor, the emitter-base distance can be reduced using a trench and an insulating layer spacer. This may improve base voltage and high-speed response characteristics.

REFERENCES:
patent: 5557131 (1996-09-01), Lee
patent: 7071500 (2006-07-01), Miura et al.
patent: 7358545 (2008-04-01), Tsai
patent: 2008/0087918 (2008-04-01), Arendt

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