Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Reexamination Certificate
2006-12-27
2009-06-16
Doan, Theresa T (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
C257S197000, C257S552000
Reexamination Certificate
active
07547959
ABSTRACT:
An improved bipolar junction transistor and a method for manufacturing the same are provided. The bipolar junction transistor includes: a buried layer and a high concentration N-type collector region in a P-type semiconductor substrate; a low concentration P-type base region in the semiconductor substrate above the buried layer; a first high concentration P-type base region along an edge of the low concentration P-type base region; a second high concentration P-type base region at a center of the low concentration P-type base region; a high concentration N-type emitter region between the first and second high concentration base regions; and insulating layer spacers between the high concentration base regions and the high concentration emitter regions. In the bipolar junction transistor, the emitter-base distance can be reduced using a trench and an insulating layer spacer. This may improve base voltage and high-speed response characteristics.
REFERENCES:
patent: 5557131 (1996-09-01), Lee
patent: 2008/0087918 (2008-04-01), Arendt
Doan Theresa T
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
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