Bipolar junction transistor and fabricating method

Details Bipolar junction transistor and fabricating method Bipolar junction transistor and fabricating method

2006-01-24

2006-01-24

Abraham, Fetsum (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S510000, C257S520000, C257S477000, C257S517000

Reexamination Certificate

active

06989557

ABSTRACT:
A bipolar junction transistor (BJT) includes a dielectric layer formed on a predetermined region of a substrate, an opening formed in the dielectric layer and a portion of the substrate being exposed, a heavily doped polysilicon layer formed on a sidewall of the opening to define a self-aligned base region in the opening, an intrinsic base doped region formed within the substrate and in a bottom of the opening by implanting through the self-aligned base region, a spacer formed on the heavily doped polysilicon layer to define a self-aligned emitter region in the opening, and an emitter conductivity layer being filled with the self-aligned emitter region and a PN junction being formed between the emitter conductivity layer and the intrinsic base doped region.

REFERENCES:
patent: 5485029 (1996-01-01), Crabbe et al.
patent: 6657242 (2003-12-01), Norstrom et al.
patent: WO 98/57367 (1998-12-01), None

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