Bipolar junction exhibiting suppressed kirk effect

Details Bipolar junction exhibiting suppressed kirk effect Bipolar junction exhibiting suppressed kirk effect

1993-08-27

1994-08-09

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

With specified impurity concentration gradient

Stepped profile

257592, 257593, 257754, 257370, 257927, 437 31, 437 34, 437 56, 437 69, H01L 2972, H01L 21265

Patent

active

053369262

ABSTRACT:
A bipolar junction transistor (BJT) which exhibits a suppressed Kirk Effect comprises a lightly-doped n-type collector region formed above a more heavily-doped n+ layer. Directly above the collector is a p-type base which has an extrinsic region disposed laterally about an intrinsic region. An n+ emitter is positioned directly above the intrinsic base region. The BJT also includes a localized n+ region disposed directly beneath the intrinsic base region which significantly increases the current handling capabilities of the transistor.

REFERENCES:
patent: 4996581 (1991-02-01), Hamasaki

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