Bipolar inversion channel field effect transistor laser

Details Bipolar inversion channel field effect transistor laser Bipolar inversion channel field effect transistor laser

1991-07-16

1993-04-13

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 46, 257 12, 257 79, H01S 319

Patent

active

052028968

ABSTRACT:
A new type of laser structure utilizes field-effect at a self-aligned p-n junction to control the current flow into the active quantum well region. The HFET laser structure is identical to the corresponding HFET transistor and is realizable with the same fabrication technology. The optical properties of the laser are optimized simultaneously with the electrical properties of the FET and thus the prospect of opto-electronic integration of the laser and the transistor are excellent.

REFERENCES:
patent: 4766472 (1988-08-01), Brillouet et al.
patent: 4819036 (1989-04-01), Kuroda et al.
patent: 4826784 (1989-05-01), Salerno et al.
patent: 4888624 (1989-12-01), Johnston, Jr. et al.
patent: 5003359 (1991-03-01), Abeles

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