Bipolar inversion channel device

Details Bipolar inversion channel device Bipolar inversion channel device

1987-01-22

1989-01-24

Edlow, Martin H.

357 16, 357 6, 357 22, 357 38, 357 17, 357 30, H01L 2972, H01L 29161, H01L 4902, H01L 2980

Patent

active

048004154

ABSTRACT:
A new solid state field effect bipolar device provides for high current gain and low input capacitance, while avoiding the "punch-through" effects that limit the downward scaling of conventional bipolar and field effect devices. The device typically comprises a metallic (e.g. a metal or silicide) emitter, which makes ohmic contact to a semi-insulator; a channel terminal which contacts an inversion layer formed at the interface between the semi-insulator and a semiconductor depletion region; and a collector, which is the semiconductor bulk. The novel device controls the flow of majority carriers from the emitter into the collector by the biasing action of charge in the inversion channel. The technique can be utilized in making a transistor, photodetector, thyristor, controlled optical emitter, and other devices.

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