Bipolar integrated device having parasitic current detector

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – Integrated structure

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327314, 327110, H01L 2500

Patent

active

055437478

ABSTRACT:
A bipolar semiconductor integrated circuit for driving a motor and the like wherein a semiconductor pattern and a circuit are so contrived that an erroneous operation will not take place even when a negative potential is applied to the output terminal of the circuit. When a negative potential is applied, there exists a quantitative proportional relationship between a parasitic current of a parasitic transistor and a ratio of the lengths of the collectors. The parasitic current decreases with a decrease in the length of the collector. Therefore, the short side of a transistor in the control circuit is directed to the output transistor to which a negative potential will be applied. By detecting the parasitic current and by adding a current to the constant-current using a current mirror circuit, furthermore, erroneous operation due to parasitism can be completely prevented.

REFERENCES:
patent: 4310792 (1982-01-01), Iwatani et al.
patent: 4322770 (1982-03-01), Sendelweck
Yanai Hisayoshi, Section of Process Device Technique, Integrated Circuit Engineering (1), Aug. 30, 1980, published by Corona Corp., pp. 165-168.

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