Bipolar integrated circuit process by separately forming active

Details Bipolar integrated circuit process by separately forming active Bipolar integrated circuit process by separately forming active

1977-04-01

1978-09-05

Dean, R.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 357 34, 357 91, H01L 21265

Patent

active

041117263

ABSTRACT:
An improved method for forming a semiconductor integrated circuit device wherein the active base area of a transistor formed therein is controlled by first forming the inactive base area and later forming the active base area, after the emitter has been formed, thus assuring the desired control over the current gain of the transistor. The separate steps of forming the inactive base area apart from the active base area eliminates the dependency of the inactive base area on the active base area so that the resistance of the inactive base area, which affects the speed of the circuit device, can be independently selected. Additionally disclosed is a method of forming the semiconductor device by a self-aligning mask technique reducing the number of critical masks and eliminating attendant alignment problems.

REFERENCES:
patent: 3725150 (1973-04-01), George
patent: 3753807 (1973-08-01), Hoare
patent: 3933528 (1976-01-01), Sloan, Jr.
patent: 4032957 (1977-06-01), Yagi et al.
J. A. Archer, "Improved Microwave Transistor Structure", Electronics Letts., Oct. 1972, 499.
J. A. Archer, "Low Noise Implanted-Base Microwave Transistors," Solid St. Electr. 17 (1974) 387.

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