Bipolar hot electron transistor

Details Bipolar hot electron transistor Bipolar hot electron transistor

1989-09-07

1990-05-15

Larkins, William D.

357 4, 357 34, H01L 2972

Patent

active

049262211

ABSTRACT:
A hot electron transistor (HET) comprising features that can result in substantially improved device characteristics is disclosed. Among the features is a highly doped (typically more than about 10.sup.20 cm.sup.-3) thin base region, a thin (typically less than about 100 nm) collector depletion region, and a highly doped (typically more than about 10.sup.19 cm.sup.-3) collector contact region. Ballistic transport through the base region is possible, despite the high doping level, because the inelastic scattering rate can be relatively low in at least some highly doped compound semiconductors such as GaAs, AlGaAs, InGaAs, or InP. The elastic scattering rate in the base region can be relatively low if the dopant atoms have an appropriate non-random distribution. Techniques for achieving such a distribution are disclosed. Transistors according to the invention are expected to find advantageous use in applications that demand high speed, e.g., in repeaters in high capacity optical fiber transmission systems.

REFERENCES:
patent: 4672404 (1987-06-01), Ankri et al.
patent: 4772934 (1988-09-01), Cunningham et al.
IEEE Spectrum, Feb. 1986, "The Quest for Ballistic Action", by T. E. Bell, pp. 36-38.
IEEE Spectrum, Feb. 1986, "Ballistic ELectrons in Compound Semiconductors", by L. F. Eastman, pp. 42-45.
Physical Review B, vol. 1(5), 1 Mar. 1970, "Lindhard Dielectric Function in the Relaxation-Time Approximation", pp. 2362-2363, by N. D. Mermin.
Physical Review B, vol. 36(2), 15 Jul. 1987, "Realization of the Esaki-Tsu-Type Doping Superlattice", by E. F. Schubert et al., pp. 1348-1351.
Physical Review Letters, vol. 60(25), 20 Jun. 1988, "Observation of Strong Ordering in Ga.sub.x In.sub.1-x P Alloy Semiconductors", by A. Gomyo et al., pp. 2645-2648.

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