Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Reexamination Certificate
2006-07-14
2009-10-20
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
C257S341000, C257S401000, C257S409000, C257S488000, C257S489000, C257S490000, C257S578000, C257SE27053, C257SE27074, C257SE27106, C257SE27149, C257SE29174
Reexamination Certificate
active
07605446
ABSTRACT:
A bipolar high voltage/power semiconductor device has a drift region having adjacent its ends regions of different conductivity types respectively. High and low voltage terminals are provided. A first insulated gate terminal and a second insulated gate terminal are also provided. One or more drive circuits provide appropriate voltages to the first and second insulated gate terminals so as to allow current conduction in a first direction or in a second direction that is opposite the first direction.
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Amaratunga Gehan A. J.
Udrea Florin
Udugampola Nishad
Cambridge Semiconductor Limited
Pillsbury Winthrop Shaw & Pittman LLP
Soward Ida M
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