Bipolar high impedance element

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – Unwanted signal suppression

Reexamination Certificate

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Details

C327S558000

Reexamination Certificate

active

11039468

ABSTRACT:
A bipolar high impedance element comprises a p-n diode made from a compound semiconductor, and circuitry arranged to reverse-bias the diode such that the diode conducts a nearly constant current—thereby enabling the element to be employed as a high impedance element. The diode is preferably the base-emitter junction of a transistor made from a compound semiconductor like InP, such that an on-chip high impedance element is provided for a fabrication process such as that used for HBTs. The element is suitably employed in an active low pass filter design: the element is connected between an input signal and an op amp input, and a feedback capacitor is connected between the op amp's output and input. The resulting filter's time constant varies with the reverse-biased diode's impedance and the capacitance of the feedback capacitor.

REFERENCES:
patent: 4392068 (1983-07-01), Welles, II
patent: 4430626 (1984-02-01), Adams
patent: 4509019 (1985-04-01), Banu et al.
patent: 4780690 (1988-10-01), Voorman
patent: 4994774 (1991-02-01), Joosse
patent: 5451852 (1995-09-01), Gusakov
patent: 6137351 (2000-10-01), Alderman et al.
patent: 6753725 (2004-06-01), Grundy
patent: 6977541 (2005-12-01), Kurose et al.

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