Bipolar heterojunction diode

Details Bipolar heterojunction diode Bipolar heterojunction diode

1994-05-03

1995-09-12

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 12, 257 22, 257198, 257201, H01L 29205, H01L 2988

Patent

active

054499224

ABSTRACT:
A bipolar heterojunction diode has an anode (11, 41), a blocking layer (12, 42) and a junction region (13, 14, 43). a heterojunction (32, 58) in the junction region (13, 14, 43) is utilized to create a misalignment between the band gap of the anode (11, 41) and a band gap of the heterojunction (13, 14, 43). The misalignment prevents a depletion region from extending into the heterojunction (13, 14, 43).

REFERENCES:
Zhu et al Solid State Comm. vol. 75 No. 7 pp. 595-599 1990 "Excitonic in Structure".
MacDonald et al., Well Width Dependence of Tunneling Current in Double-Quantum-Well Resonant Interband Tunnel Diodes, IEEE Electron Device Letters, vol. 13, No. 3, Mar. 1992, pp. 155-157.
Day et al., Double Quantum Well Resonant Tunnel Diodes, Appl. Phys. Lett. 57 (12), 17 Sep. 1990, pp. 1260-1261.

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