Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1995-03-09
1996-03-26
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257222, 257224, 257247, 257248, 377 61, H01L 29765, H01L 27148, G11C 1928
Patent
active
055023185
ABSTRACT:
The charge coupled device cell has a semiconductor layer 20 of a first conductivity type, a buried channel 22 of a second conductivity type on the semiconductor layer 20, a first virtual gate 24 in the buried channel 22, the first virtual gate is switched between at least two potential levels, and a first bipolar gate 42 in the buried channel 22 adjacent the first virtual gate 24.
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patent: 4229752 (1980-10-01), Hynecek
patent: 4300151 (1981-11-01), Nishizawa
patent: 4612521 (1986-09-01), Kleestra et al.
patent: 4779124 (1988-10-01), Hynecek
patent: 4814844 (1989-03-01), Bluzer
patent: 5001530 (1991-03-01), Kurianski et al.
patent: 5151380 (1992-09-01), Hynecek
patent: 5402459 (1995-03-01), Hynecek
Donaldson Richard L.
Hiller William E.
Munson Gene M.
Stewart Alan K.
Texas Instruments Incorporated
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