Bipolar fabrication method

Details Bipolar fabrication method Bipolar fabrication method

1991-06-07

1993-09-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 28, 148DIG10, H01L 21265

Patent

active

052448215

ABSTRACT:
A method for forming a bipolar transistor is disclosed. An optional thin screen oxide (.apprxeq.150 .ANG.) may be formed upon a substrate over an already-defined collector region. A BF.sub.2 or other implantation is performed through the screen oxide to create the base. The screen oxide is removed and replaced with a patterned high pressure oxide so that the emitter may be defined. The resulting device has a more controllable Gummel number and breakdown voltage.

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