Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Plural non-isolated transistor structures in same structure
Patent
1993-12-27
1995-03-21
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Plural non-isolated transistor structures in same structure
257571, 257496, 257586, 257618, H01L 2972
Patent
active
053998995
ABSTRACT:
A semiconductor device with a semiconductor body (1) is provided with a first and a second bipolar transistor (T1, T2, respectively) in a cascode configuration, in which the semiconductor body (1) comprises, in that order, a collector region (10) and a base region (11) of the first transistor (T1), a region (12) which forms both an emitter region of the first transistor (T1) and a collector region of the second transistor (T2), a space charge region (13), and a base region (14) and emitter region (15) of the second transistor (T2), while the regions form pn junctions with one another which extend parallel to a main surface (2) of the semiconductor body (1). The base region (14) and the emitter region (15) of the second transistor (T2) adjoin a main surface (3) of the semiconductor body (1). According to the invention, a depression (4) is provided in this main surface (3), cutting through the emitter region (12) of the first transistor (T1) which at the same time is the collector region (12) of the second transistor (T2), the space charge region (13), and the base region (14) of the second transistor (T2) and laterally bounding these; regions, while a connection electrode (B1) for the base region (11) of the first transistor (T1) is provided in the depression (4). No latch-up by a parasitic transistor then takes place in the device.
REFERENCES:
patent: 4771013 (1988-09-01), Curran
patent: 5084750 (1992-01-01), Adlerstein
Dekker Ronald
Gravesteijn Dirk J.
Maas Henricus G. R.
Versleijen Martinus P. J. G.
Biren Steven R.
U.S. Philips Corporation
Wojciechowicz Edward
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