Bipolar element having a non-linear conductivity characteristic,

Details Bipolar element having a non-linear conductivity characteristic, Bipolar element having a non-linear conductivity characteristic,

1981-06-03

1984-12-04

James, Andrew J.

357 4, 357 45, 357 65, 357 68, 350334, H01L 2978

Patent

active

044867670

ABSTRACT:
A bipolar element having a non-linear conductivity characteristic is constituted by a semiconductor body placed between two dielectric layers, a source electrode, a drain electrode and a grid electrode. The grid electrode is constituted by a first grid electrode part electrically connected to the drain electrode and a second grid electrode part electrically connected to the source electrode. This bipolar element is adapted to be used as a commutating component, especially in visualization or display devices.

REFERENCES:
patent: 3774989 (1973-11-01), Takahashi
patent: 4065781 (1977-12-01), Gutknecht
patent: 4112333 (1978-09-01), Asars et al.
patent: 4204217 (1980-05-01), Goodman
F. F. Fang, "TFT Structure with Electronically Adjustable Threshold", IBM Technical Disclosure Bulletin, vol. 20, (1978), p. 5352.
R. G. Wagger et al., "A Dual Offset Gate Thin-Film Transistor", Proceedings of the IEEE, vol. 55, Jul. 1967, pp. 1217-1218.
F. Morin, "DES Transistors en Couches Minces Pour les Ecrans de Visualisation", Electronique et Applications Industrielles, No. 251, Jun. 1, 1978, (Paris), pp. 15-16.
G. Kramer, "Thin-Film-Transistor Switching Matrix for Lat-Panel Display", IEEE Transactions on Electron Devices, vol. ED-22, No. 9, Sep. 1975, (New York, USA), pp. 733-739.
B. D. Chase et al., "Materials Analysis of Thin Film Transistors", Thin Solid Films, vol. 67, Apr. 1980, (Lausanne CH), pp. 207-228.

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