Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-09-28
1994-07-05
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257 25, 257197, 257201, H01L 29161, H01L 29205
Patent
active
053269853
ABSTRACT:
A semiconductor structure that provides both N-type and P-type doping from a single dopant source is provided. A first doping region (13) comprising a first material composition includes holes and electrons in a doping energy level (E.sub.D)- A first undoped spacer region (12) comprising the first material composition covers the doping region (13). An undoped channel (11,14) comprising a second material composition covers the first spacer region (12) and a second undoped spacer region (12) comprising the first material composition covers the undoped channel (11,14). The first material composition has a wider bandgap than the second material composition and the doping energy level (E.sub.D) is selected to provide electrons to the undoped channel (11,14) when the second material composition has a conduction band minimum less than the doping energy level (E.sub.D) and to provide holes to the first undoped channel (11,14) when the second material composition has a valence band maximum greater than the doping energy level (E.sub.D).
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Goronkin Herbert
Shen Jun
Tehrani Saied N.
Barbee Joe E.
Bernstein Aaron
Hille Rolf
Motorola Inc.
Saadat Mahshid
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