Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With non-planar semiconductor surface
Reexamination Certificate
2005-08-09
2005-08-09
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With non-planar semiconductor surface
C348S343000
Reexamination Certificate
active
06927476
ABSTRACT:
A raised extrinsic base, silicon germanium (SiGe) heterojunction bipolar transistor (HBT), and a method of making the same is disclosed herein. The heterojunction bipolar transistor includes a substrate, a silicon germanium layer formed on the substrate, a collector layer formed on the substrate, a raised extrinsic base layer formed on the silicon germanium layer, and an emitter layer formed on the silicon germanium layer. The silicon germanium layer forms a heterojunction between the emitter layer and the raised extrinsic base layer. The bipolar transistor further includes a base electrode formed on a portion of the raised extrinsic base layer, a collector electrode formed on a portion of the collector layer, and an emitter electrode formed on a portion of the emitter layer. Thus, the heterojunction bipolar transistor includes a self-aligned raised extrinsic base, a minimal junction depth, and minimal interstitial defects influencing the base width, all being formed with minimal thermal processing. The heterojunction bipolar transistor simultaneously improves three factors that affect the speed and performance of bipolar transistors: base width, base resistance, and base-collector capacitance.
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Claims of co-pending U.S. Appl. No. 09/887,310.
Freeman Gregory G.
Jagannathan Basanth
Jeng Shwu-Jen
Johnson Jeffrey B.
Schonenberg Kathryn T.
Abate Joseph P.
Farahani Dana
Internal Business Machines Corporation
Pham Long
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