Bipolar device and production thereof

Details Bipolar device and production thereof Bipolar device and production thereof

1995-06-02

1997-04-08

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

257690, 257693, H01L 2348

Patent

active

056190697

ABSTRACT:
A bipolar device having a level difference between the contact area level of a base electrode and a base region in a silicon substrate, and the contact area level of an emitter electrode and an emitter region in the silicon substrate in the range of 0.03 .mu.m to 0.1 .mu.m by removing undesirable impurities from the emitter region and a predetermined horizontal distance between a sidewall and a device isolation film does not generate dislocation and show good electric characteristics.

REFERENCES:
patent: 4996581 (1991-02-01), Hamasaki
patent: 5374846 (1994-12-01), Takemura
patent: 5444285 (1995-08-01), Robinson et al.

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