Bipolar-complementary metal oxide semiconductor inverter

Details Bipolar-complementary metal oxide semiconductor inverter Bipolar-complementary metal oxide semiconductor inverter

1988-08-31

1989-11-21

Wong, Peter S.

Electricity: power supply or regulation systems

External or operator controlled

Using a three or more terminal semiconductive device as the...

307446, 307448, 307451, 307570, G05F 110

Patent

active

048825344

ABSTRACT:
A bipolar-complementary metal oxide semiconductor (Bi-CMOS) inverter includes a CMOS inverter, an npn-type bipolar transistor, and an n-channel MOS transistor. An emitter of an n-channel MOS transistor of the CMOS inverter is connected to an emitter of the bipolar transistor and a drain of the MOS transistor. A gate of the MOS transistor is connected to an input of the CMOS inverter. When an input voltage applied to the CMOS inverter is switched to a high level, charges at an output of the CMOS inverter and at the emitter of the bipolar transistor are pulled out. During this time, the voltage at the output of the CMOS inverter decreases so as to follow the decrease of the voltage at the emitter of the bipolar transistor.

REFERENCES:
patent: 4558234 (1985-12-01), Suzuki et al.
patent: 4694203 (1987-09-01), Uragami et al.
patent: 4730132 (1988-03-01), Watanabe et al.
patent: 4740718 (1988-04-01), Matsui
patent: 4769561 (1988-09-01), Iwamura et al.

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