Bipolar-complementary metal oxide semiconductor circuit

Details Bipolar-complementary metal oxide semiconductor circuit Bipolar-complementary metal oxide semiconductor circuit

1988-11-10

1989-12-26

Hudspeth, David

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307443, 307570, 3073171, H03K 1704

Patent

active

048900184

ABSTRACT:
A bipolar-complementary metal oxide semiconductor circuit includes a p-channel MOS transistor, and an n-channel MOS transistor, first and second bipolar transistors. A base of the first bipolar transistor is connected to a negative power source through the n-channel MOS transistor. A diode is connected to the base and emitter of the first bipolar transistor. The diode functions to prevent a reverse-biased voltage exceeding a base-emitter breakdown voltage from being applied between the base and emitter of the first bipolar transistor.

REFERENCES:
patent: 4661723 (1987-04-01), Masuda et al.
patent: 4678943 (1987-07-01), Uragami et al.
patent: 4694202 (1987-09-01), Iwamura et al.
patent: 4733110 (1988-03-01), Hara et al.
patent: 4746817 (1988-05-01), Banker et al.
patent: 4804869 (1989-02-01), Masuda et al.
patent: 4808850 (1989-02-01), Masuda et al.
patent: 4839537 (1989-06-01), Ueno
patent: 4845385 (1989-07-01), Ruth, Jr.
patent: 4845386 (1989-07-01), Ueno
"TTL Level High Speed BIFET Receiver", IBM T.D.B., vol. 30, No. 8, Jan. 1988, pp. 394-395.

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