Patent
1985-09-18
1990-05-01
James, Andrew J.
357 42, 357 49, 357 59, 357 71, H01L 2702, H01L 2904, H01L 2712, H01L 2348
Patent
active
049223186
ABSTRACT:
An improved integrated circuit structure is disclosed comprising bipolar and MOS devices formed on the same substrate. The bipolar devices have at least the emitter and the collector contact portions formed from a polysilicon layer which results in raised contacts. The MOS devices are similarly formed with raised gate contact portions formed from the same polysilicon layer. Metal silicide is formed over at least a portion of the base, source, and drain regions to provide conductive paths to the base, source, and drain contacts. In one embodiment, the base, source, and drain contacts are also formed from the same polysilicon layer to permit formation of a highly planarized structure with self-aligned contacts formed by planarizing an insulating layer formed over the structure sufficiently to expose the upper surface of the contacts.
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Thomas Mammen
Weinberg Matthew
Advanced Micro Devices , Inc.
James Andrew J.
Ngo Ngan Van
Taylor John P.
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