Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Plural non-isolated transistor structures in same structure
Patent
1994-03-15
1995-03-14
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Plural non-isolated transistor structures in same structure
257568, 257539, H01L 2970, H01L 2973
Patent
active
053979133
ABSTRACT:
A Darlington transistor having improved comprehensive electric characteristic and a bipolar transistor having improved high voltage characteristic are obtained. A collector resistivity .rho.N.sup.- (F) of a collector high resistivity layer (11) in a front stage side transistor chip (TF) is set to 80 5/8cm and its collector film thickness tN.sup.- (F) is set to 120 .mu.m, and a collector resistivity .rho.N.sup.- (R) of a collector high resistivity layer (13) in a rear stage side transistor chip (TR) is set to 45 .OMEGA.cm and its collector film thickness tN.sup.- (R) is set to 160 .mu.m. Since .rho.N.sup.- (F)>.rho.N.sup.- (R) and tN.sup.- (F)<tN.sup.- (R) are satisfied, a Darlington transistor having a good comprehensive electric characteristic can be obtained, and also, since .rho.N.sup.- (R)/tN.sup.- (R)<0.6 is satisfied, a bipolar transistor having a good high voltage characteristic can be obtained (FIG. 8).
REFERENCES:
IEEE Transactions on Electron Devices, Aug. 1976, T. Suzuki, et al., "Application of Low-Impurity Concentration (High-Resistivity) Si Epitaxial Technique to High-Voltage Power Transistors", pp. 982-984.
IEEE Transactions on Electron Devices, vol. ED-23, No. 8, Aug. 1976, Karl Platzoder, et al., "High-Voltage Thyristors and Diodes Made of Neutron-Irradiated Silicon", pp. 805-808.
Hikichi Toshiaki
Takata Ikunori
Fahmy Wael M.
Limanek Robert P.
Mitsubishi Denki & Kabushiki Kaisha
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