Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
2005-04-13
2009-02-03
Elms, Richard (Department: 2824)
Semiconductor device manufacturing: process
Having metal oxide or copper sulfide compound semiconductor...
C257S043000, C257S078000, C257S614000, C257SE29094, C257SE33019, C257SE31015, C977S762000, C977S811000, C977S892000
Reexamination Certificate
active
07485488
ABSTRACT:
A metal oxide nanostructure is formed by oxidizing metallic metal in the presence of a solution containing a liquid ligand to form a metal-ligand complex, and decomposing the metal-ligand complex to form the metal oxide nanostructure. The metal-ligand complex can be a complex of zinc or copper with formamide. In one form, the nanostructure forms ZnO nanorods having a diameter of 10 to 1000 nm, where the nanorods having a hexagonal crystallographic morphology, and the nanorods are oriented perpendicular to a substrate.
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Han Mingyong
Zhang Zhongping
Agency for Science Technology and Research
Birch & Stewart Kolasch & Birch, LLP
Elms Richard
Lulis Michael
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