Patent
1986-06-11
1989-07-25
James, Andrew J.
357 16, H01L 2712, H01L 29161
Patent
active
048518867
ABSTRACT:
A resonant tunneling diode (30) with anode (40) and cathode (32) separated by binary short-period superlattice tunneling barriers (34,38) with a quantum well (36) between is disclosed. Enhancement and depletion mode diodes are disclosed.
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Masselink et al, "Improved GaAs/AlGaAs Single Quantum Wells through the Use of Thin Superlattice Buffers", Applied Physics Letters, pp. 435 to 437, Feb. 15, 1984.
Lee Jhang W.
Reed Mark A.
Comfort James T.
Hoel Carlton H.
James Andrew J.
Ngo Ngan V.
Sharp Melvin
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