Binary superlattice tunneling device and method

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357 16, H01L 2712, H01L 29161

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active

048518867

ABSTRACT:
A resonant tunneling diode (30) with anode (40) and cathode (32) separated by binary short-period superlattice tunneling barriers (34,38) with a quantum well (36) between is disclosed. Enhancement and depletion mode diodes are disclosed.

REFERENCES:
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patent: 4439782 (1984-03-01), Holonyak et al.
patent: 4598164 (1986-07-01), Tiedje et al.
patent: 4620206 (1986-10-01), Ohta et al.
patent: 4645707 (1987-02-01), Davies et al.
patent: 4721983 (1988-01-01), Frazier
Masselink et al, "Improved GaAs/AlGaAs Single Quantum Wells through the Use of Thin Superlattice Buffers", Applied Physics Letters, pp. 435 to 437, Feb. 15, 1984.

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