Binary stratified structures for periodically pumped semiconduct

Details Binary stratified structures for periodically pumped semiconduct Binary stratified structures for periodically pumped semiconduct

1994-11-29

1996-08-27

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 43, H01S 319

Patent

active

055508545

ABSTRACT:
A laser having a binary stratified structure of alternating sections of graded-index, separate confinement heterostructure (GRINSCH) and semi-insulating semiconductor formed in the direction of light propagation. The active region of the laser includes at least two GRINSCH sections upon a substrate and at least three filler sections sandwiching the at least two GRINSCH sections in an alternating fashion. An analysis of the practical limit on the minimum threshold current and the packaging problems of a semiconductor laser based on the binary stratified structure is included.

REFERENCES:
patent: 4890293 (1989-12-01), Taneya et al.
patent: 5075743 (1991-12-01), Behfar-Rad
patent: 5212707 (1993-05-01), Heidel et al.

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