Binary group III-nitride based high electron mobility...

Details Binary group III-nitride based high electron mobility... Binary group III-nitride based high electron mobility...

2005-04-29

2009-06-09

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S024000, C257S194000

Reexamination Certificate

active

07544963

ABSTRACT:
Binary Group III-nitride high electron mobility transistors (HEMTs) and methods of fabricating binary Group III-nitride HEMTs are provided. In some embodiments, the binary Group III-nitride HEMTs include a first binary Group III-nitride barrier layer, a binary Group III-nitride channel layer on the first barrier layer; and a second binary Group III-nitride barrier layer on the channel layer. In some embodiments, the binary Group III-nitride HEMTs include a first AIN barrier layer, a GaN channel layer and a second AIN barrier layer.

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