Binary germanium-silicon interconnect and electrode structure fo

Details Binary germanium-silicon interconnect and electrode structure fo Binary germanium-silicon interconnect and electrode structure fo

1981-03-16

1984-04-10

Saba, W. G.

Metal treatment

Stock

Ferrous

148 331, 148 334, 357 59, 357 71, 420556, 420578, 428620, 428641, 428929, H01L 29163, H01L 2954

Patent

active

044424493

ABSTRACT:
An interconnect structure for use in integrated circuits comprises a germanium-silicon binary alloy. Such an alloy is deposited on the semiconductor wafer from the co-deposition of germanium and silicon using chemical vapor deposition techniques of a type commonly used in the semiconductor industry. The resulting alloy can be oxidized, selectively removed and doped with selected impurities to provide a conductive lead pattern of a desired shape on the surface of a wafer.

REFERENCES:
patent: 2981877 (1961-04-01), Noyce
patent: 3279954 (1966-10-01), Cody et al.
patent: 3544311 (1970-12-01), DeBucs et al.
patent: 3699395 (1972-10-01), Boleky
patent: 3740835 (1973-06-01), Duncan
Gardiner et al., "Ultrashallow Emitter Junctions", I.B.M. Tech. Discl. Bull., vol. 11, No. 10, Mar. 1969, p. 1340.

Affiliated with

Also associated with

Rating

Binary germanium-silicon interconnect and electrode structure fo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Binary germanium-silicon interconnect and electrode structure fo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Binary germanium-silicon interconnect and electrode structure fo will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-895619