BiMOS semiconductor integrated circuit having short-circuit prot

Details BiMOS semiconductor integrated circuit having short-circuit prot BiMOS semiconductor integrated circuit having short-circuit prot

1990-07-25

1992-07-21

Hudspeth, David

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

3072965, 307443, 307570, 361 88, H03K 1708

Patent

active

051325667

ABSTRACT:
An output circuit capable of limiting an output current from a BiMOS semiconductor integrated circuit without adversely affecting an operational speed includes a plurality of bipolar transistors connected to form a Darlington circuit and at least one field effect transistor which can be either a P-channel or an N-channel transistor. The circuit is capable of removing rise current limitations of the bipolar transistors in the Darlington circuit during a normal operation by using a single MOS transistor to provide a branch circuit for the Darlington circuit, which limits the output current of the circuit under the specific condition that it provides a high level output and its output terminal is short-circuited to the ground.

REFERENCES:
patent: 4424455 (1984-01-01), Neely
patent: 4638186 (1987-01-01), McLaughlin
patent: 4649294 (1987-03-01), McLaughlin
patent: 4746817 (1988-05-01), Banker et al.
patent: 4760433 (1988-07-01), Young et al.
patent: 4791320 (1988-12-01), Kawata et al.

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