BiMOS high speed inverter circuit

Details BiMOS high speed inverter circuit BiMOS high speed inverter circuit

1985-12-04

1988-01-12

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307263, 307268, 307570, H03K 1902, H03K 512, H03K 501, H03K 1760

Patent

active

047193700

ABSTRACT:
An improved inverter circuit capable of attaining complete swift inversion is shown. The circuit comprises bipolar transistors (27, 29) by which an inverted output takes a level near the rated level and MOS transistors (21, 23) by which the inverted output reaches the rated level from the near level. The MOS transistor (21, 23) is driven by a bipolar transistor (31) and possesses high current driving capacity with its large dimensions of the gate region.

REFERENCES:
patent: 3619659 (1971-11-01), Meyer et al.
patent: 4425516 (1984-01-01), Wanlass

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