Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1987-02-24
1989-09-19
Sikes, William L.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307443, 307455, 307544, 307570, H03K 1902, H03K 19086, H03K 1760
Patent
active
048684210
ABSTRACT:
To reduce the total power dissipation of an emitter-follower driver or logic circuit, an MOS transistor is connected between an output terminal of the circuit and a suitable voltage source. The MOS transistor is operated in opposite phase to an emitter follower bipolar transistor that provides driving current to the output terminal, so that one is on while the other is off. The MOS transistor limits the current in the emitter follower transistor in either state of the circuit, thus reducing power dissipation. It also provides for a larger transient driving current to the output terminal, thus increasing the switching speed of the circuit.
REFERENCES:
patent: 3546485 (1970-12-01), Davis
patent: 4694203 (1987-09-01), Uragami et al.
Herndon William H.
Proebsting Robert J.
Fairchild Semiconductor Corporation
Sikes William L.
Wambach M. R.
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