Bimorphic structures, sensor structures formed therewith,...

Metal working – Piezoelectric device making

Reexamination Certificate

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C029S592100, C029S593000, C029S594000, C029S595000, C310S300000, C310S307000, C073S776000, C073S774000, C073S781000, C257S414000

Reexamination Certificate

active

07827660

ABSTRACT:
A bimorphic structure responsive to changes in an environmental condition, sensor structures incorporating one or more of such bimorphic structures, and a method of forming such bimorphic structures. The sensor structure has an electrically-conductive first contact on a substrate, and a bimorph beam anchored to the substrate so that a portion thereof is suspended above the first contact. The bimorph beam has a multilayer structure that includes first and second layers, with the second layer between the first layer and the substrate. A portion of the first layer projects through an opening in the second layer toward the first contact so as to define an electrically-conductive second contact located on the beam so as to be spaced apart and aligned with the first contact for contact with the first contact when the beam sufficiently deflects toward the substrate.

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patent: 6876482 (2005-04-01), DeReus
patent: 2003/0132823 (2003-07-01), Hyman et al.
patent: 2004/0188785 (2004-09-01), Cunningham et al.
patent: 2006/0018239 (2006-01-01), Nam et al.

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