Bilayer electrode on a n-type semiconductor

Details Bilayer electrode on a n-type semiconductor Bilayer electrode on a n-type semiconductor

1996-07-29

1997-10-14

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257741, 257744, H01L 2348, H01L 2352, H01L 2940

Patent

active

056775725

ABSTRACT:
An electrode in contact with a n-type semiconductor for use in an electronic or optoelectronic device is disclosed. The electrode includes a non-conducting layer contacting the semiconductor; a conductive layer contacting the non-conducting layer, and the materials and the thickness of the non-conducting layer being selected so that the bilayer forms a low-resistance contact to the semiconductor, the bilayer providing stability against atmospheric corrosion.

REFERENCES:
patent: 4971948 (1990-11-01), Dam et al.
patent: 5063183 (1991-11-01), Taniguchi et al.
patent: 5075796 (1991-12-01), Schildkraut et al.
patent: 5157541 (1992-10-01), Schildkraut et al.
patent: 5262668 (1993-11-01), Tu et al.
patent: 5492776 (1996-02-01), Paz-Pujalt et al.
patent: 5519234 (1996-05-01), Paz de Araujo et al.
patent: 5525380 (1996-06-01), Paz-Pujalt et al.

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