Bilaterally controllable thyristor

Details Bilaterally controllable thyristor Bilaterally controllable thyristor

1998-03-24

2000-06-20

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Bidirectional rectifier with control electrode

257127, 257119, 257128, 257144, 257170, H01L 29747

Patent

active

060780657

ABSTRACT:
A specification is given of a bidirectionally controllable thyristor which is distinguished by improved decoupling between the two thyristor structures. In particular, the intention is that the switched-off structure cannot be triggered in an uncontrolled manner by undesirable migration of charge carriers. This is achieved by virtue of the fact that the degree of shorting of the cathode region increases toward the isolation region. In particular, this can be achieved by virtue of the fact that the density per unit area of the short-circuit regions tends to a maximum value toward the isolation region. The use of a linear, continuous short-circuit region running along the isolation region is particularly favorable. (FIG. 1).

REFERENCES:
patent: 3792320 (1974-02-01), Hutson
patent: 4641175 (1987-02-01), Shiraishi
Bi-Directional Control Thyristor Production Information; ABB Semiconductors AG; Bjorn Backlund et al.; Jan., 1997; pp. 1-19.

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